| PART |
Description |
Maker |
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| STC08DE150HP C08DE150HP |
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| BUK7575-55 BUK7575-55_2 BUK7575-55127 |
19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
TrenchMOS TM transistor Standard level FET
|
NXP SEMICONDUCTORS
Philips
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| WS128K32NV-17H1MA WS128K32NV-17H1C WS128K32NV-17H1 |
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, HERMETIC SEALED, CERAMIC, HIP-66
|
Microsemi, Corp.
White Electronic Designs, Corp.
|
| SI4980DY-T1-E3 |
TRANSISTOR 3.7 A, 80 V, 0.075 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Power
|
Vishay Siliconix
|
| FQD20N06LTF FQD20N06LTM |
17.2 A, 60 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD SEMICONDUCTOR CORP
|
| TB0485A |
SAW Filter 173.075 MHz SMD 5.0X7.0 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
TAI-SAW TECHNOLOGY CO.,...
|
| 0191310111 |
InsulKrimp Block Spade Tongue Terminal for 10 to 12 AWG Wire, Stud Size 10,Length 27.31mm (.1.075)
InsulKrimp垄芒 Block Spade Tongue Terminal for 10 to 12 AWG Wire, Stud Size 10,Length 27.31mm (.1.075")
|
Molex Electronics Ltd.
|
| 0537800370 |
1.25mm (.049) Pitch PanelMate Header, Surface Mount, Right Angle, 1.90mm(.075) Height, Lead-free, 3 Circuits
1.25mm (.049") Pitch PanelMate垄芒 Header, Surface Mount, Right Angle, 1.90mm(.075") Height, Lead-free, 3 Circuits
|
Molex Electronics Ltd.
|
| 51-25-1005 0051-25-1005 051-25-1012 0051251005 WM2 |
.075 PITCH LFH INSERT - MOLDED TERMINAL STRIP 24 CKT. MALE (SALES DWG)
|
Molex Electronics Ltd.
|
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